Surface states and electronic structure of polar and nonpolar InN - An in situ photoelectron spectroscopy study

被引：22

作者：

Eisenhardt, A. ^{[1
]}

Krischok, S.

Himmerlich, M.

机构：

[1] Tech Univ Ilmenau, Inst Phys, D-98694 Ilmenau, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 23期

关键词：

FILMS; X-2; GAN;

D O I：

10.1063/1.4810074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Valence band structure and surface states of InN with (0001), (000-1), (1-100), and (11-20) orientation were investigated in situ after growth using photoelectron spectroscopy. Depending on surface orientation, different occupied surface states are identified and differentiated from bulk contributions. For N-polar, m-plane, and a-plane InN, the surface states are located at the valence band maximum, while In-polar InN features surface states close to the Fermi level. The surface band alignment correlates with the position of surface states. For InN(0001), a much larger surface downward band bending is observed compared to N-polar, m-plane, and a-plane InN, where almost flat band conditions occur. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 27 条

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