Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films

被引：22

作者：

Fleet, L. R. ^{[1
]}

Yoshida, K. ^{[2
,3
,4
]}

Kobayashi, H. ^{[5
]}

Kaneko, Y. ^{[5
]}

Matsuzaka, S. ^{[5
]}

Ohno, Y. ^{[5
]}

Ohno, H. ^{[5
]}

Honda, S. ^{[6
]}

Inoue, J. ^{[7
]}

Hirohata, A. ^{[8
,9
]}

机构：

[1] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England

[2] Nagoya Univ, Dept Crystalline Mat Sci, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Ecotopia Sci Inst, Nagoya, Aichi 4648603, Japan

[4] Japan Fine Ceram Ctr, Nanostruct Res Lab, Nagoya, Aichi 4568587, Japan

[5] Tohoku Univ, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan

[6] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[7] Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 4648603, Japan

[8] Univ York, Dept Elect, York YO10 5DD, N Yorkshire, England

[9] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

TRANSPORT; SILICON; SPINTRONICS;

D O I：

10.1103/PhysRevB.87.024401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Understanding the effect of the interface on electrical spin injection is of great importance for the development of semiconductor spintronics. Fe/GaAs(001) is one of the leading systems for exploring these effects due to the small lattice mismatch. We report on the correlation between the experimentally observed Fe/GaAs(001) interface with the spin-transport properties. Using high-angle annular dark-field scanning transmission electron microscopy, we observe a predominantly abrupt interface with some regions of partial mixing also observed in the same film. We report that reproducible behavior with no bias-dependent polarization inversion was achieved for three-terminal devices. Using ab initio calculations of the experimentally observed interfaces, we show that the contribution to the transport from minority carriers is strongly dependent on the interface structure. DOI: 10.1103/PhysRevB.87.024401

引用

页数：5

共 33 条

[11] Local Hanle-effect studies of spin drift and diffusion in n:GaAs epilayers and spin-transport devices
Furis, M.
Smith, D. L.
Kos, S.
Garlid, E. S.
Reddy, K. S. M.
Palmstrom, C. J.
Crowell, P. A.
Crooker, S. A.
[J]. NEW JOURNAL OF PHYSICS, 2007, 9
[12] Bias dependence of spin-polarized tunnel current through Fe/GaAs and Fe/GaAs/Fe junctions
Honda, S.
Itoh, H.
Inoue, J.
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (13)
[13] Spin polarization control through resonant states in an Fe/GaAs Schottky barrier
Honda, S.
Itoh, H.
Inoue, J.
Kurebayashi, H.
Trypiniotis, T.
Barnes, C. H. W.
Hirohata, A.
Bland, J. A. C.
[J]. PHYSICAL REVIEW B, 2008, 78 (24):
[14] Spin accumulation near Fe/GaAs (001) interfaces: The role of semiconductor band structure
Hu, Q. O.
Garlid, E. S.
Crowell, P. A.
Palmstrom, C. J.
[J]. PHYSICAL REVIEW B, 2011, 84 (08)
[15] Jansen R, 2012, NAT MATER, V11, P400, DOI [10.1038/NMAT3293, 10.1038/nmat3293]
[16] Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact
Jonker, Berend T.
Kioseoglou, George
Hanbicki, Aubrey T.
Li, Connie H.
Thompson, Phillip E.
[J]. NATURE PHYSICS, 2007, 3 (08) : 542 - 546
[17] Progress toward electrical injection of spin-polarized electrons into semiconductors
Jonker, BT
[J]. PROCEEDINGS OF THE IEEE, 2003, 91 (05) : 727 - 740
[18] Jungwirth T, 2012, NAT MATER, V11, P382, DOI [10.1038/NMAT3279, 10.1038/nmat3279]
[19] From ultrasoft pseudopotentials to the projector augmented-wave method
Kresse, G
Joubert, D
[J]. PHYSICAL REVIEW B, 1999, 59 (03): : 1758 - 1775
[20] Atomic structure of postgrowth annealed epitaxial Fe/(001) GaAs interfaces
LeBeau, James M.
Hu, Qi O.
Palmstrom, Christopher J.
Stemmer, Susanne
[J]. APPLIED PHYSICS LETTERS, 2008, 93 (12)

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