Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films

被引：22

作者：

Fleet, L. R. ^{[1
]}

Yoshida, K. ^{[2
,3
,4
]}

Kobayashi, H. ^{[5
]}

Kaneko, Y. ^{[5
]}

Matsuzaka, S. ^{[5
]}

Ohno, Y. ^{[5
]}

Ohno, H. ^{[5
]}

Honda, S. ^{[6
]}

Inoue, J. ^{[7
]}

Hirohata, A. ^{[8
,9
]}

机构：

[1] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England

[2] Nagoya Univ, Dept Crystalline Mat Sci, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Ecotopia Sci Inst, Nagoya, Aichi 4648603, Japan

[4] Japan Fine Ceram Ctr, Nanostruct Res Lab, Nagoya, Aichi 4568587, Japan

[5] Tohoku Univ, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan

[6] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[7] Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 4648603, Japan

[8] Univ York, Dept Elect, York YO10 5DD, N Yorkshire, England

[9] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

TRANSPORT; SILICON; SPINTRONICS;

D O I：

10.1103/PhysRevB.87.024401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Understanding the effect of the interface on electrical spin injection is of great importance for the development of semiconductor spintronics. Fe/GaAs(001) is one of the leading systems for exploring these effects due to the small lattice mismatch. We report on the correlation between the experimentally observed Fe/GaAs(001) interface with the spin-transport properties. Using high-angle annular dark-field scanning transmission electron microscopy, we observe a predominantly abrupt interface with some regions of partial mixing also observed in the same film. We report that reproducible behavior with no bias-dependent polarization inversion was achieved for three-terminal devices. Using ab initio calculations of the experimentally observed interfaces, we show that the contribution to the transport from minority carriers is strongly dependent on the interface structure. DOI: 10.1103/PhysRevB.87.024401

引用

页数：5

共 33 条

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