Relaxation phenomena at the metal-to-insulator transition in La0.8Sr0.2MnO3 single crystals

The time dependence of the resistance R-AC of a L0.8Sr0.2MnO3 single crystal has been investigated in the vicinity of the metal-to-insulator transition temperature. We used local probe microscopy to show the existence, at room temperature, of coexisting clusters of micrometer size. Our analysis shows that relaxation effects can be described with a simple exponential contribution using a random resistor-network, based on phase separation between insulating and metallic domains. Our results clearly prove the existence of a percolation threshold over which no percolation path exists. Moreover, these results highlight the significant role of the remanent magnetization. (C) 2008 Elsevier Ltd. All rights reserved.