Three-dimensional radial-junction ZnO nanowire/a-Si:H core-shell infrared photodiodes

被引：2

作者：

Iheanacho, Bright C. ^{[1
]}

Tari, Alireza ^{[1
]}

Wong, William S. ^{[1
]}

机构：

[1] Univ Waterloo, Elect & Comp Engn, Waterloo, ON, Canada

来源：

NANOTECHNOLOGY | 2020年 / 31卷 / 35期

基金：

加拿大自然科学与工程研究理事会;

关键词：

radial-junction diodes; core-shell nanowires; infrared photodiodes; light scattering; 3-D material system; AMORPHOUS-SILICON; ABSORPTION ENHANCEMENT; HYDROTHERMAL GROWTH; SOLAR-CELLS; SEED LAYER; TEMPERATURE; PERFORMANCE;

D O I：

10.1088/1361-6528/ab93f2

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hydrogenated amorphous silicon (a-Si:H)-based infrared photodiodes were fabricated by coating a-Si:H thin-film p-i-n layers over hydrothermally-synthesized disordered zinc oxide (ZnO) nanowire (NW) networks. Due to enhanced light scattering, the reversed biased three dimensional (3-D) radial-junction NW diodes showed an similar to 10x increase in photocurrent under a broad spectrum (800-2000 nm) infrared (IR) illumination compared to planar devices. The diodes were optimized by using InGaZnO (IGZO) transparent top contacts that had 20% higher optical transmission in the IR compared to Al-doped ZnO electrodes. Reverse-bias dark current was minimized by optimizing the area of the NW sidewalls and the a-Si:H shell layer thickness. The former reduces the effects of carrier recombination along the NW core-shell interface and the latter minimizes the tunnelling current across the radial-junction device. An enhancement of similar to 100x was achieved for these devices compared to non-optimized diodes.

引用

页数：7

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