Total ionizing dose effects in bipolar and BiCMOS devices

被引：0

作者：

Chavez, RM ^{[1
]}

Rax, BG ^{[1
]}

Scheick, LZ ^{[1
]}

Johnston, AH ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

NSREC: 2005 IEEE Radiation Effects Data Workshop, Workshop Record | 2005年

关键词：

bipolar; complementary metal oxide semiconductor (CMOS); enhanced low dose rate sensitivity (ELDRS); low dose level (LDL); and total ionizing dose (TID);

D O I：

暂无

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

This paper describes Total Ionizing Dose (TID) test results performed at JPL. Bipolar and BiCMOS device samples were tested exhibiting significant degradation and failures at different irradiation levels. Linear technology which is susceptible to low-dose dependency (ELDRS) exhibited greater damage for devices tested under zero bias condition.

引用

页码：144 / 148

页数：5

共 5 条

[1] Enhanced damage in linear bipolar integrated circuits at low dose rate
Johnston, AH
Rax, BG
Lee, CI
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1995, 42 (06) : 1650 - 1659
[2] Continuing evaluation of bipolar linear devices for total dose bias dependency and ELDRS effects
McClure, SS
Gorelick, JL
Yui, CC
Rax, BG
Wiedeman, MD
[J]. 2003 IEEE RADIATION EFFECTS DATA WORKSHOP RECORD, 2003, : 1 - 5
[3] MCCLURE SS, 2000 IEEE RAD EFF DA, P100
[4] Enhanced low-dose-rate sensitivity of a low-dropout voltage regulator
Pease, RL
McClure, S
Gorelick, J
Witczak, SC
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (06) : 2571 - 2576
[5] Degradation of precision reference devices in space environments
Rax, BG
Lee, CI
Johnston, AH
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1997, 44 (06) : 1939 - 1944

← 1 →