Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

被引：129

作者：

Kim, H. S. ^{[1
]}

Cellek, O. O.

Lin, Zhi-Yuan

He, Zhao-Yu

Zhao, Xin-Hao

Liu, Shi

Li, H.

Zhang, Y. -H.

机构：

[1] Arizona State Univ, Ctr Photon Innovat, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 16期

关键词：

HGCDTE; DETECTORS; PERFORMANCE;

D O I：

10.1063/1.4760260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Long-wave infrared InAs/InAsSb type-II superlattice nBn photodetectors are demonstrated on GaSb substrates. The typical device consists of a 2.2 mu m thick absorber layer and has a 50% cutoff wavelength of 13.2 mu m, a measured dark current density of 5 x 10(-4) A/cm(2) at 77 K under a bias of -0.3 V, a peak responsivity of 0.24 A/W at 12 mu m, and a maximum resistance-area product of 300 Omega cm(2) at 77 K. The calculated generation-recombination noise limited specific detectivity (D*) and experimentally measured D* at 12 mu m and 77K are 1 x 10(10) cm Hz(1/2)/W and 1 x 10(8) cm Hz(1/2)/W, respectively. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4760260]

引用

页数：3

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