Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers

被引：4

作者：

Mahadik, Nadeemullah A. ^{[1
]}

Stahlbush, Robert E. ^{[1
]}

Caldwell, Joshua D. ^{[1
]}

O'Loughlin, Michael ^{[2
]}

Burk, Albert ^{[2
]}

机构：

[1] USN, Res Lab, 4555 Overlook Ave, Washington, DC 20375 USA

[2] Creare Res & Dev Inc, Durham, NC 27703 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

Carrier Lifetime; Extended Defects; High power; DISLOCATIONS;

D O I：

10.4028/www.scientific.net/MSF.717-720.297

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of extended defects on carrier lifetime was investigated in 140 pm thick 4H-SiC epilayers using whole wafer ultraviolet photoluminescence (UVPL) and microwave photoconductive decay (mu PCD) mapping. Half-loop arrays (HLA) seen in the UVPL images showed a corresponding lifetime degradation in the same region, even before expansion of the HLAs to form SFs. Lifetime lowering was also seen for a defect comprising of a small 3C-SiC inclusion with a larger misoriented 4H-SiC region. Additionally, formation of slip planes after high temperature annealing was observed, which consequently shows a lifetime reduction in that region.

引用

页码：297 / +

页数：2

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