Ion beam synthesis of nanothermochromic diffraction gratings with giant switching contrast at telecom wavelengths

被引：16

作者：

Zimmer, Johannes ^{[1
,2
]}

Wixforth, Achim ^{[1
,2
]}

Karl, Helmut ^{[3
]}

Krenner, Hubert J. ^{[1
,2
]}

机构：

[1] Univ Augsburg, Lehrstuhl Expt Phys 1, D-86159 Augsburg, Germany

[2] Univ Augsburg, ACIT, D-86159 Augsburg, Germany

[3] Univ Augsburg, Lehrstuhl Expt Phys 4, D-86159 Augsburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 23期

关键词：

METAL-INSULATOR-TRANSITION; PHASE-TRANSITION; VO2; NANOCRYSTALS; ORGANIZATION; SILICON; DOMAINS;

D O I：

10.1063/1.4728110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanothermochromic diffraction gratings based on the metal-insulator transition of VO2 are fabricated by site-selective ion beam implantation in a SiO2 matrix. Gratings were defined either (i) directly by spatially selective ion beam synthesis or (ii) by site-selective deactivation of the phase transition by ion beam induced defects. The strongest increase of the diffracted light intensities was observed at a wavelength of 1550 nm exceeding a factor of 20 for the selectively deactivated gratings. The observed pronounced thermal hysteresis extending down close to room temperature makes this system ideally suited for optical memory applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4728110]

引用

页数：5

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