Polysilicon thin-film transistors processed at low temperature (<= 600 degrees C) using solid-phase crystallization in wet oxygen atmosphere

被引：0

作者：

Hamada, H

Sasaki, A

Okita, Y

Niina, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 6A期

关键词：

polysilicon; TFT; SPC; low-temperature process; AMLCD;

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暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The spin density and oxygen concentration of polysilicon films have been successfully reduced using a novel solid-phase-crystallization (SPC) method in an ambient of wet oxygen, The threshold voltage (V-th), subthreshold swing (S) and field-effect mobility (mu(FE)) for thin-film transistors (TFTs) processed at less than or equal to 600 degrees C using the polysilicon films were 2.0 V, 0.27 V/dec, and similar to 35 cm(2)/V . s, respectively. This performance was achieved with one-third less plasma hydrogeneration time than that of the conventional SPC method in an ambient of nitrogen.

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页码：L680 / L682

页数：3

相关论文

共 11 条

[1] STUDY ON HYDROGENATION OF POLYSILICON THIN-FILM TRANSISTORS BY ION-IMPLANTATION [J].

CAO, M ;

ZHAO, TM ;

SARASWAT, KC ;

PLUMMER, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (06) :1134-1140

[2]

FUKUSHIMA Y, 1993, 1993 INT C SOL STAT, P993

[3] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1567-1573

[4]

KIM YS, 1994, 1994 INT C SOL STAT, P673

[5] HIGH-PERFORMANCE POLY-SI TFTS FABRICATED USING PULSED-LASER ANNEALING AND REMOTE PLASMA CVD WITH LOW-TEMPERATURE PROCESSING [J].

KOHNO, A ;

SAMESHIMA, T ;

SANO, N ;

SEKIYA, M ;

HARA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (02) :251-257

[6] CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS [J].

LEVINSON, J ;

SHEPHERD, FR ;

SCANLON, PJ ;

WESTWOOD, WD ;

ESTE, G ;

RIDER, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1193-1202

[7] FABRICATION OF SELF-ALIGNED ALUMINUM GATE POLYSILICON THIN-FILM TRANSISTORS USING LOW-TEMPERATURE CRYSTALLIZATION PROCESS [J].

OHNO, E ;

YOSHINOUCHI, A ;

HOSODA, T ;

ITOH, M ;

MORITA, T ;

TSUCHIMOTO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B) :635-638

[8] ANALYSIS OF CURRENT VOLTAGE CHARACTERISTICS OF LOW-TEMPERATURE-PROCESSED POLYSILICON THIN-FILM TRANSISTORS [J].

ONO, K ;

AOYAMA, T ;

KONISHI, N ;

MIYATA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (04) :792-802

[9]

STEPHEN MC, 1994, IDRC MONT, P294

[10] CHARACTERISTICS OF SELF-INDUCED LIGHTLY-DOPED-DRAIN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH LIQUID-PHASE DEPOSITION SIO2 AS GATE-INSULATOR AND PASSIVATION-LAYER [J].

YEH, CF ;

YANG, TZ ;

CHEN, TJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (02) :307-314