Metal-based asymmetric field emission diodes operated in the air

被引:13
作者
Chang, Wen-Teng [1 ]
Chuang, Tsung-Ying [1 ]
Su, Chen-Wei [1 ]
机构
[1] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung, Taiwan
关键词
Field emission diode; Air channel; Asymmetric electrodes; Diode-like; Finite element analysis; Fowler-Nordheim tunneling; DEVICE; DYNAMICS;
D O I
10.1016/j.mee.2020.111418
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, metal-based asymmetric electrodes for field emission (FE) diodes were fabricated. E-beam lithography generated a minimal anode-cathode distance of approximately 24 nm. Measurements in the air displayed Fowler-Nordheim tunneling under a potential less than 0.5 V. The design enabled the maximal electric field at acute terminals made of multiple triangles as cathode, thus generating high acceleration for the forward current. By contrast, the maximal electric field occurred at blunt terminals made of multiple semicircles as cathode, thus generating low acceleration in reverse bias. Furthermore, the reverse bias could be subject to electron scattering because of the operation in the air, leading to a lower electric current than the forward bias. The forward/reverse current ratio increased with increasing applied voltage. Compared with other asymmetric FE devices, the FE diodes developed in this work can effectively enhance the forward/reverse current ratio, suggesting that asymmetric cathode and anode design can serve as an FE diode. Finite element modeling showed that the electric field and speed were maximal at apices of the multiple triangular electrodes used as cathode and minimal on flat edges of the multiple semicircular electrodes used as cathode, thereby resulting in asymmetric electron flow. The results supported the potential application of metal-based asymmetric electrodes to FE diodes.
引用
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页数:6
相关论文
共 32 条
[1]   Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures [J].
Arslan, Engin ;
Butun, Serkan ;
Ozbay, Ekmel .
APPLIED PHYSICS LETTERS, 2009, 94 (14)
[2]   Field emission in air and space-charge-limited currents from iridium-iridium oxide tips with gaps below 100 nm [J].
Brimley, Scott ;
Miller, Mark S. ;
Hagmann, Mark J. .
JOURNAL OF APPLIED PHYSICS, 2011, 109 (09)
[3]   Vertical Field Emission Air-Channel Diodes and Transistors [J].
Chang, Wen-Teng ;
Hsu, Hsu-Jung ;
Pao, Po-Heng .
MICROMACHINES, 2019, 10 (12)
[4]   Field Electrons Intercepted by Coplanar Gates in Nanoscale Air Channel [J].
Chang, Wen-Teng ;
Pao, Po-Heng .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (09) :3961-3966
[5]   Discharge from hot CaO. [J].
Child, CD .
PHYSICAL REVIEW, 1911, 32 (05) :0492-0511
[6]   Fabrication and behavior of nanoscale field emission structures [J].
Driskill-Smith, AAG ;
Hasko, DG ;
Ahmed, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2773-2776
[7]   Nanoscale field emission structures for ultra-low voltage operation at atmospheric pressure [J].
DriskillSmith, AAG ;
Hasko, DG ;
Ahmed, H .
APPLIED PHYSICS LETTERS, 1997, 71 (21) :3159-3161
[8]   The impact of etched trenches geometry and dielectric material on the electrical behaviour of silicon-on-insulator self-switching diodes [J].
Farhi, G. ;
Morris, D. ;
Charlebois, S. A. ;
Raskin, J-P .
NANOTECHNOLOGY, 2011, 22 (43)
[9]   Electron emission in intense electric fields [J].
Fowler, RH ;
Nordheim, L .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1928, 119 (781) :173-181
[10]  
Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647