Effect of the ZnS shell layer on the charge storage capabilities of organic bistable memory devices fabricated utilizing CuInS2-ZnS core-shell quantum dots embedded in a poly(methylmethacrylate) layer

被引：9
作者：
Yun, Dong Yeol [1 ]
Kim, Tae Whan [1 ]
Kim, Sang Wook [2 ]
机构：
[1] Hanyang Univ, Dept Nanoscale Semicond Engn, Seoul 133791, South Korea
[2] Ajou Univ, Dept Mol Sci & Technol, Suwon 443749, South Korea
来源：
THIN SOLID FILMS | 2013年 / 544卷
基金：
新加坡国家研究基金会;
关键词：
Organic bistable memory devices; CuInS2 quantum dot; PMMA; CuInS2-ZnS core-shell quantum dot; FILMS;
D O I：
10.1016/j.tsf.2013.02.086
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical characteristics of organic bistable memory devices (OBDs) fabricated utilizing CuInS2 (CIS) core or CIS-ZnS core-shell quantum dots (QDs) embedded in a poly(methylmethacrylate) (PMMA) layer on indium-tin-oxide (ITO) coated glass substrates were investigated. X-ray photoelectron spectroscopy spectra demonstrated that the stoichiometries of the QDs embedded in a PMMA layer were CIS or CIS-ZnS QDs. Current-voltage measurements on Al/CIS or CIS-ZnS QDs embedded in PMMA layer/ITO glass devices at 300 K showed current bistabilities. The maximum ON/OFF current ratios of the OBDs with CIS or CIS-ZnS QDs were approximately 1 x 10(3) and 1 x 10(5), respectively. The retention number of ON and OFF states was measured by 1 x 10(5). The memory mechanisms of the OBDs with CIS or CIS-ZnS QDs are described on the basis of the experimental results. (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码：433 / 436
页数：4
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