Ion-influenced Surface diffusion of Ge on Si(111).

被引：0
|
作者：
Seebauer, EG [1 ]
Blomiley, ER [1 ]
Ditchfield, R [1 ]
机构：
[1] Univ Illinois, Dept Chem Engn, Urbana, IL 61801 USA
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1999年 / 218卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
176-COLL
引用
收藏
页码：U450 / U450
页数：1
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