Fully three-dimensional analysis of leakage current in non-planar oxides

被引：0

作者：

Schwaha, P ^{[1
]}

Heinzl, R ^{[1
]}

Brezna, W ^{[1
]}

Smoliner, J ^{[1
]}

Enichlmair, H ^{[1
]}

Minixhofer, R ^{[1
]}

Grasser, T ^{[1
]}

机构：

[1] TU Vienna, CDL, IUE, A-1040 Vienna, Austria

来源：

MODELLING AND SIMULATION 2005 | 2005年

关键词：

three-dimensional tunneling simulation; measurement data processing; leakage current;

D O I：

暂无

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

We demonstrate the applicability of fully three-dimensional device simulation with the investigation of tunneling currents through oxides and show its benefit for the understanding of physical phenomena especially in the nanometre regime. We compare leak-age current measurements from three oxides with different thicknesses (7 nm, 15 nm, and 50 nm), measured by an atomic force microscope (AFM), with simulated Fowler-Nordheim (FN) current distributions and show the necessity of including surface roughness as in essential part of three-dimensional simulation.

引用

页码：469 / 473

页数：5