Interaction at the silicon/transition metal oxide heterojunction interface and its effect on the photovoltaic performance

被引：32

作者：

Liang, Zhimin ^{[1
]}

Su, Mingze ^{[1
]}

Zhou, Yangyang ^{[1
]}

Gong, Li ^{[2
]}

Zhao, Chuanxi ^{[1
]}

Chen, Keqiu ^{[1
]}

Xie, Fangyan ^{[2
]}

Zhang, Weihong ^{[2
]}

Chen, Jian ^{[2
]}

Liu, Pengyi ^{[1
]}

Xie, Weiguang ^{[1
]}

机构：

[1] Jinan Univ, Dept Phys, Siyuan Lab, Guangzhou 510632, Guangdong, Peoples R China

[2] Sun Yat Sen Univ, Instrumental Anal & Res Ctr, Guangzhou 510275, Guangdong, Peoples R China

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2015年 / 17卷 / 41期

基金：

中国国家自然科学基金;

关键词：

SOLAR-CELLS; MOLYBDENUM OXIDE; GAP STATES; FILM;

D O I：

10.1039/c5cp05309a

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The interfacial reaction and energy level alignment at the Si/transition metal oxide (TMO, including MoO3-x, V2O5-x, WO3-x) heterojunction are systematically investigated. We confirm that the interfacial reaction appears during the thermal deposition of TMO, with the reaction extent increasing from MoO3-x, to V2O5-x, and to WO3-x. The reaction causes the surface oxidation of silicon for faster electron/hole recombination, and the reduction of TMO for effective hole collection. The photovoltaic performance of the Si/TMO heterojunction devices is affected by the interface reaction. MoO3-x are the best hole selecting materials that induce least surface oxidation but strongest reduction. Compared with H-passivation, methyl group passivation is an effective way to reduce the interface reaction and improve the interfacial energy level alignment for better electron and hole collection.

引用

页码：27409 / 27413

页数：5

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