Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells

被引：15

作者：

Giorgioni, Anna ^{[1
,2
]}

Pezzoli, Fabio ^{[1
,2
]}

Gatti, Eleonora ^{[1
,2
]}

Cecchi, Stefano ^{[3
,4
]}

Inoki, Carlos Kazuo ^{[5
]}

Deneke, Christoph ^{[5
]}

Grilli, Emanuele ^{[1
,2
]}

Isella, Giovanni ^{[3
,4
]}

Guzzi, Mario ^{[1
,2
]}

机构：

[1] Univ Milano Bicocca, LNESS, I-20125 Milan, Italy

[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[3] Politecn Milan, LNESS, I-20133 Milan, Italy

[4] Politecn Milan, Dipartimento Fis, I-20133 Milan, Italy

[5] Lab Nacl Nanotecnol, BR-13083100 Campinas, SP, Brazil

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 01期

关键词：

ELECTRONIC RAMAN-SCATTERING; GERMANIUM; SILICON;

D O I：

10.1063/1.4774316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The polarization of the direct gap emission from Ge/SiGe multiple quantum wells has been studied in the 4 K to 300 K temperature range, and in samples with different well thicknesses. Our results demonstrate that the polarization type and degree strongly depend on the excitation of electrons from the heavy hole and the light hole subbands, thus providing an effective degree of freedom to control the polarization of the direct interband emission. In addition, the analysis of the temperature dependence of the polarization degree highlights spin depolarization mechanisms. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4774316]

引用

页数：4

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