Secondary Ion Mass Spectrometry of Vapor-Liquid-Solid Grown, Au-Catalyzed, Si Wires

被引：78

作者：

Putnam, Morgan C. ^{[1
]}

Filler, Michael A. ^{[2
]}

Kayes, Brendan M. ^{[2
]}

Kelzenberg, Michael D. ^{[2
]}

Guan, Yunbin ^{[3
]}

Lewis, Nathan S. ^{[1
]}

Eiler, John M. ^{[3
]}

Atwater, Harry A. ^{[2
]}

机构：

[1] CALTECH, Div Chem & Chem Engn, Pasadena, CA 91125 USA

[2] CALTECH, Div Engn & Appl Sci, Pasadena, CA 91125 USA

[3] CALTECH, Div Geol & Planetary Sci, Pasadena, CA 91125 USA

来源：

NANO LETTERS | 2008年 / 8卷 / 10期

关键词：

D O I：

10.1021/nl801234y

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Knowledge of the catalyst concentration within vapor-liquid-solid (VLS) grown semiconductor wires is needed in order to assess potential limits to electrical and optical device performance imposed by the VLS growth mechanism. We report herein the use of secondary ion mass spectrometry to characterize the Au catalyst concentration within individual, VLS-grown, Si wires. For Si wires grown by chemical vapor deposition from SiCl4 at 1000 degrees C, an upper limit on the bulk Au concentration was observed to be 1.7 x 10(16) atoms/cm(3), similar to the thermodynamic equilibrium concentration at the growth temperature. However, a higher concentration of Au was observed on the sidewalls of the wires.

引用

页码：3109 / 3113

页数：5

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