Electrical properties of electrodeposited CdTe photovoltaic devices on metallic substrates: study using small area Au-CdTe contacts

被引：34

作者：

Kosyachenko, LA ^{[1
]}

Mathew, X

Motushchuk, VV

Sklyarchuk, VM

机构：

[1] Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine

[2] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Temixco 62580, Morelos, Mexico

来源：

SOLAR ENERGY | 2006年 / 80卷 / 02期

关键词：

solar cells; CdTe; electrodeposition; charge transport;

D O I：

10.1016/j.solener.2005.01.009

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Charge transport properties of the Schottky diodes fabricated on n-CdTe layers electrodeposited on stainless steel foil are investigated. The small area Au-CdTe contacts facilitated the investigation of the role of shunt and series resistances on the I-V characteristics of the thin-film CdTe device. The charge transport mechanism in these diodes is found to be generation-recombination in the depletion layer and over-barrier electron flow at low and higher bias voltages, respectively. By using this model a quantitative theoretical analysis of the current-voltage characteristics of the diodes is possible. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：148 / 155

页数：8

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