Effect of interfacial strain on spin injection and spin polarization of Co2CrAl/NaNbO3/Co2CrAl magnetic tunneling junction

被引：11

作者：

Cai, Yongqing ^{[1
]}

Bai, Zhaoqiang ^{[1
,2
]}

Yang, Ming ^{[1
]}

Feng, Yuan Ping ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[2] Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore

来源：

EPL | 2012年 / 99卷 / 03期

关键词：

D O I：

10.1209/0295-5075/99/37001

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

First-principles calculations were carried out to investigate interfacial strain effects on spin injection and spin polarization of a magnetic tunnel junction consisting of half-metallic full-Heusler alloy Co2CrAl and ferroelectric perovskite NaNbO3. Spin-dependent coherent tunneling was calculated within the framework of non-equilibrium Green's function technique. Both spin polarization and tunnel magnetoresistance (TMR) are affected by the interfacial strain but their responses to compressive and tensile strains are different. Spin polarization across the interface is fully preserved under a compressive strain due to stronger coupling between interfacial atoms, whereas a tensile strain significantly enhances interface states and leads to substantial drops in spin polarization and TMR. Copyright (C) EPLA, 2012

引用

页数：5

共 27 条

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