Length-scale dependence of the step bunch self-organization on patterned vicinal Si(111) surfaces - art. no. 071914

被引:3
|
作者
Kwon, T
Phaneuf, RJ [1 ]
Kan, HC
机构
[1] Univ Maryland, Dept Mat Sci & Engn, Phys Sci Lab, College Pk, MD 20742 USA
[2] Univ Maryland, Dept Phys, Phys Sci Lab, College Pk, MD 20742 USA
关键词
D O I
10.1063/1.2175501
中图分类号
O59 [应用物理学];
学科分类号
摘要
We use lithographic patterning and high-temperature annealing to investigate the length-scale dependence of self-organization of step bunches on vicinal Si(111) surfaces due to the motion and interference of misorientation-derived straight steps and the circular steps which bound cylindrical pits. Annealing of patterns with small pit diameters produces a rapid relaxation to straight step bunches, while larger structures maintain significant in-plane corrugations for as long as the out-of-plane corrugations persist. This indicates the existence of a characteristic length scale, set by the competition between the Gibbs-Thomson effect and sublimation. Significantly, the eventual relaxation is to nearly uniform step trains indicating that the late stage evolution is dominated by repulsive step-step interactions.
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页数:3
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