Dielectric characteristics of Si-added and Si-doped TbMnO3

被引：7
作者：
Lu, Cong [1 ]
Cui, Yimin [1 ]
机构：
[1] Beihang Univ, Dept Phys, Key Lab Micronano Measurement Manipulat & Phys, Minist Educ, Xueyuan Rd 37, Beijing 100191, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2014年 / 432卷
基金：
中国国家自然科学基金;
关键词：
TbMnO3; Si-added; Si-doped; Dielectric characteristics; Complex impedance; POLARONIC RELAXATION; FEATURES;
D O I：
10.1016/j.physb.2013.09.030
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Polycrystalline Si added TbMnSixO3 (x=0.05, 0.1) and Si doped Tb1-xMnSixO3, TbMn1-xSixO3 (x=0.05, 0.1) samples were fabricated by a conventional solid-state reaction. The dielectric properties of ceramics have been investigated in a temperature range of 77-350 K and a frequency range of 0.1-200 kHz. Especially, an extraordinarily high low-frequency dielectric constant (similar to 10(5)) at mom temperature was observed in TbMnSi0.1O3, and the values of epsilon'(T) at other frequencies can reach around 10(4). It turns out that the addition of element Si changes dielectric properties of TbMnO3 remarkably. Through the measured data of complex impedance, bulk contribution and grain boundary effects to electrical response are identified by the analysis of complex plane diagrams (Nyquist diagram). (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：58 / 63
页数：6
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