Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

被引：5

作者：

Mantey, J. ^{[1
]}

Hsu, W. ^{[1
]}

James, J. ^{[1
]}

Onyegam, E. U. ^{[1
]}

Guchhait, S. ^{[1
]}

Banerjee, S. K. ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Elect & Comp Engn, Ctr Microelect Res, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 19期

关键词：

CHEMICAL-VAPOR-DEPOSITION; GERMANIUM; QUALITY; SILICON; CARBON; SI;

D O I：

10.1063/1.4807500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. (C) 2013 AIP Publishing LLC.

引用

页数：4