Effect of high flux plasma exposure on the micro-structural and -mechanical properties of ITER specification tungsten

被引:20
作者
Dubinko, A. [1 ,2 ]
Terentyev, D. [1 ,7 ]
Bakaeva, A. [1 ,2 ]
Pardoen, T. [3 ]
Zibrov, M. [2 ,4 ,5 ,6 ,7 ]
Morgan, T. W. [5 ]
机构
[1] CEN SCK, Inst Nucl Mat Sci, B-2400 Mol, Belgium
[2] Univ Ghent, Dept Appl Phys, B-9000 Ghent, Belgium
[3] Catholic Univ Louvain, Inst Mech Mat & Civil Engn, Pl St Barbe 2 L5-02-02, B-1348 Louvain La Neuve, Belgium
[4] Max Planck Inst Plasma Phys, Boltzmannstr 2, D-85748 Garching, Germany
[5] DIFFER, FOM Inst, Zaale 20, NL-5612 AJ Eindhoven, Netherlands
[6] Tech Univ Munich, Phys Dept E28, James Franck Str 1, D-85748 Garching, Germany
[7] Natl Res Nucl Univ MEPhI, Moscow Engn Phys Inst, Kashirskoe Shosse 31, Moscow 115409, Russia
关键词
High flux plasma; Tungsten; Dislocations; RETENTION; DEUTERIUM; ENERGY;
D O I
10.1016/j.nimb.2016.10.041
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We have performed a combined study using transmission electron microscopy (TEM), nuclear reaction analysis (NRA) and nano-indentation (NI) techniques to reveal the impact of high flux plasma exposure on the properties of a sub-surface region of the commercially available pure tungsten fabricated following the ITER specification. TEM examination revealed the formation of a dense dislocation network and dislocation tangles, resulting in a strong increase in the dislocation density by at least one order of magnitude as compared to the bulk density. The plasma-induced dislocation microstructure vanishes within a depth of about 10-15 mu m from the top of the exposed surface. Surface hardness after the plasma exposure was characterized by NI and was found to increase significantly in the sub-surface region of 1.5-3 mu m. That was attributed to the resistance of the plasma-induced dislocation networks and deuterium-induced defects, whose presence within a depth of similar to 1 mu m was unambiguously detected by the NRA measurements as well. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:155 / 159
页数:5
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