Thermophysical properties of TiB2 - SiC ceramics from 300 °C to 1700 °C

被引:16
作者
Wang, Zhi [1 ]
Xie, Bing [2 ]
Zhou, Wenya [1 ]
Shi, Guodong [1 ]
Wu, Zhanjun [1 ]
机构
[1] Dalian Univ Technol, State Key Lab Struct Anal Ind Equipment, Sch Aeronaut & Astronaut, Fac Vehicle Engn & Mech, Dalian 116024, Peoples R China
[2] Cent Inst Correct Police, Infrastruct Construct Dept, Baoding 071000, Peoples R China
基金
中国国家自然科学基金;
关键词
Ceramics; Thermal conductivity; Microstructure; THERMOMECHANICAL PROPERTIES; DENSIFICATION; COMPOSITES; OXIDATION; GRAPHITE; MICROSTRUCTURE; TEMPERATURES; CARBIDE;
D O I
10.1016/j.ijrmhm.2013.08.001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the present work, high-frequency induction heating is used to fabricate TiB2 - SiC ceramics and the relative density was more than 97%, and then the thermophysical properties of TiB2 - SiC ceramics were investigated in detail. The specific heat showed the weak dependence on the test temperature due to the presence of the interface gap because the relative density was not 100%. As the sintering temperature increased, the thermal diffusivity of TiB2 - SiC ceramics increased, which was due to the increase of relative density and grain growth. The thermal conductivity of TiB2 - SiC ceramics showed a marked increase with increasing grain size and relative density. This could be attributed to a reduction in the number of grain boundaries that interrupt the heat flow path, resulting in an increase in the mean free path of the phonons. Larger grains led to an increase of mean free path of the phonons and thus contributed to a further increase in thermal conductivity. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:609 / 613
页数:5
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