Optimization for mid-wavelength InSb infrared focal plane arrays under front-side illumination

被引：21

作者：

Guo, N. ^{[1
]}

Hu, W. D. ^{[1
]}

Chen, X. S. ^{[1
]}

Lei, W. ^{[2
]}

Lv, Y. Q. ^{[3
]}

Zhang, X. L. ^{[3
]}

Si, J. J. ^{[3
]}

Lu, W. ^{[1
]}

机构：

[1] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China

[2] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia

[3] Luoyang Optoelect Inst, Luoyang 471009, Henan, Peoples R China

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2013年 / 45卷 / 07期

基金：

中国国家自然科学基金;

关键词：

InSb Infrared focal plane arrays; Numerical simulation; Quantum efficiency; NUMERICAL-ANALYSIS; CROSSTALK;

D O I：

10.1007/s11082-012-9630-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The quantum efficiency for mid-wavelength InSb infrared focal plane arrays has been numerically studied by two dimensional simulators. Effects of thickness of p-type layer on the quantum efficiency under front-side illumination have been obtained. The calculated results can be used to extract the optimal thickness of the p-type layer for different absorption and diffusion lengths. It is indicated that the optimal thickness of the p-type layer strongly depends on the absorption coefficient and the minority carrier lifetimes. The empirical formulas are also obtained to describe the correlation between the optimal thickness of the p-type layer, and the absorption and diffusion lengths.

引用

页码：673 / 679

页数：7