Epitaxial ErSi2-x on strained and relaxed Si1-xGex

被引：4

作者：

Travlos, A

Apostolopoulos, G

Boukos, N

Katiniotis, C

Tsamakis, D

机构：

[1] Natl Ctr Sci Res Demokritos, Inst Mat Sci, GR-15310 Athens, Greece

[2] Natl Tech Univ Athens, Athens 15773, Greece

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 89卷 / 1-3期

关键词：

epitaxy; erbium silicide; silicon germanium;

D O I：

10.1016/S0921-5107(01)00835-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study for the first time the epitaxial growth of ErSi2-x on strained and relaxed Si1-xGex substrates, as well as its structural properties. Epitaxy of ErSi2-x is achieved at a temperature of 550 degreesC after the reaction of a very thin Er/Si template layer. ErSi2-x grows in the tetragonal phase, which has been previously observed for epitaxial growth on Si at higher temperatures. ErSi2-x layers grown on relaxed Si1-xGex exhibit a higher crystal quality, due to the reduction of the lattice mismatch with increasing Ge content. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：382 / 385

页数：4

共 4 条

[1] Growth of epitaxial CoSi2 on SiGe(001) [J].