OPTICAL PROPERTIES AND CARRIER DYNAMICS IN ASYMMETRIC COUPLED InGaN MULTIPLE QUANTUM WELLS

被引：6

作者：

Weng, Guo-En ^{[1
,2
,3
]}

Zhang, Bao-Ping ^{[1
,2
,3
]}

Liang, Ming-Ming ^{[1
,2
,3
]}

Lv, Xue-Qin ^{[3
]}

Zhang, Jiang-Yong ^{[1
,2
]}

Ying, Lei-Ying ^{[1
,2
]}

Qiu, Zhi Ren ^{[4
]}

Yaguchi, H. ^{[5
]}

Kuboya, S. ^{[6
]}

Onabe, K. ^{[6
]}

Chen, Shao-Qiang ^{[7
]}

Akiyama, H. ^{[7
]}

机构：

[1] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China

[2] Xiamen Univ, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China

[3] Xiamen Univ, Pen Tung Sah Inst Micro Nano Sci & Technol, Xiamen 361005, Peoples R China

[4] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[5] Saitama Univ, Grad Sch Sci & Engn, Div Math Elect & Informat, Saitama 3388570, Japan

[6] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan

[7] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

来源：

FUNCTIONAL MATERIALS LETTERS | 2013年 / 6卷 / 02期

基金：

中国国家自然科学基金;

关键词：

InGaN; asymmetric coupled quantum wells; carrier dynamics; transition energy; DEFECTS; GAN;

D O I：

10.1142/S1793604713500215

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical properties and carrier dynamics of InGaN/GaN asymmetric coupled quantum wells (ACQWs) are studied by excitation-power-dependent photoluminescence (PL), photoreflectance (PR) and time-resolved PL (TRPL) experiments. Under weak excitations, only the emission from the widest well is observed due to the tunneling from narrower to wider wells. Under strong excitations, the carrier distribution becomes more uniform and an enhanced emission from the mid well (2.5 nm well) is observed. Dependence of the PL intensity on excitation power is well explained by a rate equation model. The energy levels in the ACQW structure are clearly revealed by PR measurements and are in good agreement with calculations. Our results indicate that the enhanced emission from the mid well is ascribed to "reverse tunneling" from 3.0 to 2.5 nm well, which is confirmed by TRPL experiments.

引用

页数：5

共 50 条

[31] Carrier capture in InGaN quantum wells and hot carrier effects in GaN
Binet, F
Duboz, JY
Grattepain, C
Scholz, F
Off, J
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3): : 323 - 329
[32] Polarization switching of the optical gain in semipolar InGaN quantum wells
Scheibenzuber, W. G.
Schwarz, U. T.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (03): : 647 - 651
[33] Influence of in volatilization on photoluminescence in InGaN/GaN multiple quantum wells
Shi, Kaiju
Wang, Chengxin
Li, Rui
Qu, Shangda
Wu, Zonghao
Deng, Jianyang
Xu, Mingsheng
Xu, Xiangang
Ji, Ziwu
MATERIALS EXPRESS, 2021, 11 (12) : 2033 - 2038
[34] Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells
Malinauskas, T.
Kadys, A.
Grinys, T.
Nargelas, S.
Aleksiejunas, R.
Miasojedovas, S.
Mickevicius, J.
Tomasiunas, R.
Jarasiunas, K.
Vengris, M.
Okur, S.
Avrutin, V.
Li, X.
Zhang, F.
Ozgur, U.
Morkoc, H.
GALLIUM NITRIDE MATERIALS AND DEVICES VII, 2012, 8262
[35] Phonon satellites and time-resolved studies of carrier recombination dynamics in InGaN quantum wells
Olaizola, S. M.
Fan, W. H.
Mowbray, D. J.
Skolnick, M. S.
Parbrook, P. J.
Fox, A. M.
SUPERLATTICES AND MICROSTRUCTURES, 2007, 41 (5-6) : 419 - 424
[36] Effects of annealing on structural and optical properties of InGaN/GaN multiple quantum wells at emission wavelength of 490 nm
Liu, H. F.
Liu, W.
Yong, A. M.
Zhang, X. H.
Chua, S. J.
Chi, D. Z.
JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)
[37] Optical Properties of A-Plane InGaN/GaN Multiple Quantum Wells Grown on Nanorod Lateral Overgrowth Templates
Huang, Huei-Min
Ling, Shih-Chun
Chan, Wei-Wen
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2011, 47 (08) : 1101 - 1106
[38] Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
Yadan Zhu
Taiping Lu
Xiaorun Zhou
Guangzhou Zhao
Hailiang Dong
Zhigang Jia
Xuguang Liu
Bingshe Xu
Nanoscale Research Letters, 2017, 12
[39] Comparison of optical properties of GaN/AlGaN and InGaN/AlGaN single quantum wells
Chichibu, SF
Shikanai, A
Deguchi, T
Setoguchi, A
Nakai, R
Nakanishi, H
Wada, K
DenBaars, SP
Sota, T
Nakamura, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (4B): : 2417 - 2424
[40] Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures
Huang, Xuanqi
Li, Dongying
Su, Po-Yi
Fu, Houqiang
Chen, Hong
Yang, Chen
Zhou, Jingan
Qi, Xin
Yang, Tsung-Han
Montes, Jossue
Deng, Xuguang
Fu, Kai
DenBaars, Steven P.
Nakamura, Shuji
Ponce, Fernando A.
Ning, Cun-Zheng
Zhao, Yuji
NANO ENERGY, 2020, 76 (76)

← 1 2 3 4 5 →