OPTICAL PROPERTIES AND CARRIER DYNAMICS IN ASYMMETRIC COUPLED InGaN MULTIPLE QUANTUM WELLS

被引：6
|
作者：
Weng, Guo-En [1 ,2 ,3 ]
Zhang, Bao-Ping [1 ,2 ,3 ]
Liang, Ming-Ming [1 ,2 ,3 ]
Lv, Xue-Qin [3 ]
Zhang, Jiang-Yong [1 ,2 ]
Ying, Lei-Ying [1 ,2 ]
Qiu, Zhi Ren [4 ]
Yaguchi, H. [5 ]
Kuboya, S. [6 ]
Onabe, K. [6 ]
Chen, Shao-Qiang [7 ]
Akiyama, H. [7 ]
机构：
[1] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
[2] Xiamen Univ, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China
[3] Xiamen Univ, Pen Tung Sah Inst Micro Nano Sci & Technol, Xiamen 361005, Peoples R China
[4] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[5] Saitama Univ, Grad Sch Sci & Engn, Div Math Elect & Informat, Saitama 3388570, Japan
[6] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan
[7] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
来源：
FUNCTIONAL MATERIALS LETTERS | 2013年 / 6卷 / 02期
基金：
中国国家自然科学基金;
关键词：
InGaN; asymmetric coupled quantum wells; carrier dynamics; transition energy; DEFECTS; GAN;
D O I：
10.1142/S1793604713500215
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Optical properties and carrier dynamics of InGaN/GaN asymmetric coupled quantum wells (ACQWs) are studied by excitation-power-dependent photoluminescence (PL), photoreflectance (PR) and time-resolved PL (TRPL) experiments. Under weak excitations, only the emission from the widest well is observed due to the tunneling from narrower to wider wells. Under strong excitations, the carrier distribution becomes more uniform and an enhanced emission from the mid well (2.5 nm well) is observed. Dependence of the PL intensity on excitation power is well explained by a rate equation model. The energy levels in the ACQW structure are clearly revealed by PR measurements and are in good agreement with calculations. Our results indicate that the enhanced emission from the mid well is ascribed to "reverse tunneling" from 3.0 to 2.5 nm well, which is confirmed by TRPL experiments.
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页数：5
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