Lithographically defined low dimensional SiGe nanostripes as silicon stressors

被引:9
作者
Bollani, M. [1 ]
Chrastina, D. [2 ]
Fiocco, M. [3 ,4 ]
Mondiali, V. [2 ]
Frigerio, J. [2 ]
Gagliano, L. [3 ,4 ]
Bonera, E. [3 ,4 ]
机构
[1] IFN CNR, L NESS, I-22100 Como, Italy
[2] Politecn Milan, L NESS, Dipartimento Fis, I-22100 Como, Italy
[3] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy
[4] Univ Milano Bicocca, L NESS, I-20125 Milan, Italy
关键词
Fondazione Cariplo is gratefully acknowledged for financing the DefCon4 project; Grant No. 2011-0331;
D O I
10.1063/1.4765009
中图分类号
O59 [应用物理学];
学科分类号
摘要
The introduction of strain in semiconductors is a well-known technique for increasing their conductivity and thus for enhancing the performance of silicon-based electronic devices. In the present work, we investigate the strain induced in the Si substrate by linear SiGe/Si structures with a width less than 100 nm. By varying the Ge content and geometrical parameters, it is possible to maximize the strain in the Si substrate without detrimental plastic relaxation in the SiGe stripes. The structures were defined by electron-beam lithography from strained SiGe deposited epitaxially by low-energy plasma-enhanced chemical vapor deposition. The strain in the heterostructures has been characterized by a combination of finite-element modeling, x-ray diffraction, and mu Raman spectroscopy techniques. We show that nano-patterning induces an anisotropic strain relaxation in the SiGe stripe with a simultaneous strong compression of the Si substrate. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4765009]
引用
收藏
页数:4
相关论文
共 16 条
[1]   Angular dispersion of optical phonon frequencies in strained cubic crystals [J].
Anastassakis, E .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (07) :3046-3056
[2]   Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations [J].
Bonera, E. ;
Pezzoli, F. ;
Picco, A. ;
Vastola, G. ;
Stoffel, M. ;
Grilli, E. ;
Guzzi, M. ;
Rastelli, A. ;
Schmidt, O. G. ;
Miglio, L. .
PHYSICAL REVIEW B, 2009, 79 (07)
[3]   Raman stress maps from finite-element models of silicon structures [J].
Bonera, Emiliano ;
Fanciulli, Marco ;
Carnevale, Gianpietro .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (03)
[4]   Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes [J].
Chen, Feng ;
Euaruksakul, Chanan ;
Liu, Zheng ;
Himpsel, F. J. ;
Liu, Feng ;
Lagally, Max G. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (32)
[5]   Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction [J].
Chrastina, D. ;
Vanacore, G. M. ;
Bollani, M. ;
Boye, P. ;
Schoeder, S. ;
Burghammer, M. ;
Sordan, R. ;
Isella, G. ;
Zani, M. ;
Tagliaferri, A. .
NANOTECHNOLOGY, 2012, 23 (15)
[6]   Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs [J].
Chu, Min ;
Sun, Yongke ;
Aghoram, Umamaheswari ;
Thompson, Scott E. .
ANNUAL REVIEW OF MATERIALS RESEARCH, 2009, 39 :203-229
[7]   LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J].
DISMUKES, JP ;
PAFF, RJ ;
EKSTROM, L .
JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) :3021-&
[8]   Effects of composition, strain, and atomic disorder on optical phonon frequencies in Si1-xGex [J].
Hossain, M. Z. ;
Johnson, H. T. .
JOURNAL OF APPLIED PHYSICS, 2010, 107 (07)
[9]  
Jasak H, 2000, INT J NUMER METH ENG, V48, P267, DOI 10.1002/(SICI)1097-0207(20000520)48:2<267::AID-NME884>3.0.CO
[10]  
2-Q