The Effect of Offcut Angle on Electrical Conductivity of Wafer-Bonded n-GaAs/n-GaAs Structures for Wafer-Bonded Tandem Solar Cells

被引:0
作者
Yeung, King W. [1 ]
Goorsky, Mark S. [1 ]
机构
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
来源
2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年
关键词
photovoltaic cells; wafer bonding; III-V semiconductor materials; substrates; V COMPOUND SEMICONDUCTORS; INTERFACE; ORIENTATION; RESISTANCE;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The effect of offcut angle on the electrical conductivity of III-V multijunction solar devices is investigated using n-GaAs/n-GaAs direct-bonded structures. In the solar industry, misoriented substrates are commonly used in the growth of III-V epitaxial layers. In addition, wafer bonding has been proposed as a potential method of integrating lattice-mismatched materials to avoid the formation of threading dislocations. Our previously published papers showed that sulfur passivation reduces the density of surface charge states and improves the interface conductivity. However, the impact of the offcut angle on the electrical properties has not been explored. n-GaAs wafers miscut towards < 111 > A are chosen and compared to nominal on-axis (001) substrates. The surfaces are treated with either an oxide etch or additional soak in aqueous (NH4)(2)S. Off-axis wafers are bonded face-to-face in various orientations and then annealed at 400 degrees C for two hours. It is observed that the electrical conductivity improves considerably with a short rapid thermal processing at 600 degrees C. However, the out-of-plane relative surface misorientations between the tilted (001) planes greater than 4 exhibit increasingly non-ohmic behavior. A theoretical model that describes the electron tunneling across a grain boundary between semiconductor bicrystals is used to represent the bonded interface and estimate the barrier conduction height. Fitting the zero-bias conductance over a range of temperatures reveals a 0.4 eV increase in barrier height for 12 degrees misoriented sulfur-passivated bonded pairs. Accordingly, the interface resistance at room temperature rises from 0.01 Omega.cm(2) to 3.4 Omega.cm(2). These results demonstrate that the out-of-plane relative surface misorientation is the critical parameter to be monitored in order to achieve superior electrical conductivity in direct-bonded multijunction solar applications.
引用
收藏
页码:982 / 987
页数:6
相关论文
共 15 条
[1]   ANTIPHASE DOMAINS IN GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SILICON-ON-INSULATOR [J].
CHU, SNG ;
NAKAHARA, S ;
PEARTON, SJ ;
BOONE, T ;
VERNON, SM .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) :2981-2989
[2]   THE EFFECTS OF LOW-ANGLE OFF-AXIS SUBSTRATE ORIENTATION ON MOSFET PERFORMANCE AND RELIABILITY [J].
CHUNG, JE ;
CHEN, J ;
KO, PK ;
HU, CM ;
LEVI, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) :627-633
[3]   Sulfide films on PbSe thin layer grown by MBE [J].
Gautier, C ;
Breton, G ;
Nouaoura, M ;
Cambon, M ;
Charar, S ;
Averous, M .
THIN SOLID FILMS, 1998, 315 (1-2) :118-122
[4]   Synthetic near I£5 (210)/[100] grain boundary in YAG fabricated by direct bonding: structure and stability [J].
Hartmann, Katharina ;
Wirth, Richard ;
Heinrich, Wilhelm .
PHYSICS AND CHEMISTRY OF MINERALS, 2010, 37 (05) :291-300
[5]  
JACKSON MJ, 2011, J APPL PHYS, V49, P110
[6]   LOW-RESISTANCE OHMIC CONDUCTION ACROSS COMPOUND SEMICONDUCTOR WAFER-BENDED INTERFACES [J].
KISH, FA ;
VANDERWATER, DA ;
PEANASKY, MJ ;
LUDOWISE, MJ ;
HUMMEL, SG ;
ROSNER, SJ .
APPLIED PHYSICS LETTERS, 1995, 67 (14) :2060-2062
[7]   Improved electrical properties of wafer-bonded p-GaAs/n-InP interfaces with sulfide passivation [J].
Nakayama, Keisuke ;
Tanabe, Katsuaki ;
Atwater, Harry A. .
JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)
[8]  
Oigawa H, 1995, MATER SCI FORUM, V185-, P191, DOI 10.4028/www.scientific.net/MSF.185-188.191
[9]   Direct wafer bonding of III-V compound semiconductors for free-material and free-orientation integration [J].
Okuno, Y ;
Uomi, K ;
Aoki, M ;
Tsuchiya, T .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (06) :959-969
[10]   DC VOLTAGE DEPENDENCE OF SEMICONDUCTOR GRAIN-BOUNDARY RESISTANCE [J].
PIKE, GE ;
SEAGER, CH .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3414-3422