Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide-nitride-oxide-silicon memory

被引:2
|
作者
Liu, L. [1 ]
Xu, J. P. [1 ]
Chen, J. X. [1 ]
Ji, F. [1 ]
Huang, X. D. [2 ]
Lai, P. T. [2 ]
机构
[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China
[2] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
MONOS memory; High-k gate stack; Charge storage layer; Tunneling layer; Blocking layer; FLASH MEMORY; DEVICE; GAP;
D O I
10.1016/j.tsf.2012.10.051
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A high-k gate stack structure with ultrathin HfON/SiO2 as dual tunneling layer (DTL), AlN as charge storage layer (CSL) and HfAlO as blocking layer (BL) is proposed to make a charge-trapping-type metal-oxide-nitride-oxide-silicon non-volatile memory device by employing in-situ sputtering method. The validity of the structure is examined and confirmed by transmission electron microscopy. The memory window, program/erase, endurance and retention properties are investigated and compared with similar gate stack structure with Si3N4/SiO2 as DTL, HfO2 as CSL and Al2O3 as BL. Results show that a large memory window of 3.55 V at a program/erase (P/E) voltage of +8 V/-15 V, high P/E speed, and good endurance and retention characteristic can be achieved using the Au/HfAlO/AlN/(HfON/SiO2)/Si gate stack structure. The main mechanisms lie in the enhanced electron injection through the ultrathin high-k HfON/SiO2 DTL with suitable band offset, high trapping efficiency of the high-k AlN material, and effective blocking role of the high-k HfAlO BL. (C) 2012 Published by Elsevier B. V.
引用
收藏
页码:263 / 267
页数:5
相关论文
共 50 条
  • [41] Fabrication and characterization of metal-oxide-nitride-oxynitride-polysilicon nonvolatile semiconductor memory device with silicon oxynitride (SiOxNy) as tunneling layer on glass
    Jung, Sungwook
    Kim, Jaehong
    Son, Hyukjoo
    Hwang, Sunghyun
    Jang, Kyungsoo
    Lee, Jungin
    Lee, Kwangsoo
    Park, Hyungjun
    Kim, Kyunghae
    Yi, Junsin
    Chung, Hokyoon
    Choi, Byoungdeog
    Lee, Kiyong
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (09)
  • [42] Using SiO2 nanoparticles to efficiently enhance light emission from metal-oxide-silicon tunneling diodes on Si
    Lin, CF
    Huang, WP
    Liang, EZ
    Sue, TW
    Hsieh, HH
    COMMAD 2002 PROCEEDINGS, 2002, : 329 - 332
  • [43] Sensitivity Enhancement of Metal-oxide-semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-thin SiO2 Layer
    Chen, Tzu-Yu
    Hwu, Jenn-Gwo
    STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS) 55 -AND- LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 6, 2013, 58 (08): : 79 - 85
  • [44] Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO2 Layer
    Chen, Tzu-Yu
    Hwu, Jenn-Gwo
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (04) : Q37 - Q41
  • [45] OPTICAL-ABSORPTION IN ULTRATHIN SILICON-OXIDE FILMS NEAR THE SIO2/SI INTERFACE
    TERADA, N
    HAGA, T
    MIYATA, N
    MORIKI, K
    FUJISAWA, M
    MORITA, M
    OHMI, T
    HATTORI, T
    PHYSICAL REVIEW B, 1992, 46 (04): : 2312 - 2318
  • [46] The Electrical Properties of MOS-Structures with Silicon Nanoballs Incrusted In SiO2 Layer
    Voshchenkov, Artyom A.
    Efremov, Mikhail D.
    Antonenko, Alexander H.
    Kamayev, Gennady H.
    Volodin, Vladimir A.
    Arzhannikova, Sofia A.
    Vishnyakov, Aleksey V.
    Marin, Denis V.
    Gismatulin, Andrey A.
    EDM: 2009 10TH INTERNATIONAL CONFERENCE AND SEMINAR ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES, 2009, : 7 - 11
  • [47] Effects of Interface Nitride Layer on Electrical Characteristics of SiO2/Nitride/SiC Metal-Insulator-Semiconductor Diode
    Yamakami, Tomohiko
    Suzuki, Shinichiro
    Henmi, Mitsunori
    Murata, Yusuke
    Hayashibe, Rinpei
    Kamimura, Kiichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (01)
  • [48] Electrical Characteristics of SiO2/4H-SiC Metal-oxide-semiconductor Capacitors with Low-temperature Atomic Layer Deposited SiO2
    Jo, Yoo Jin
    Moon, Jeong Hyun
    Seok, Ogyun
    Bahng, Wook
    Park, Tae Joo
    Ha, Min-Woo
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17 (02) : 265 - 270
  • [49] Dynamics of the Charge Centroid in Metal-Oxide-Nitride-Oxide-Silicon Memory Cells during Avalanche Injection and Fowler-Nordheim Injection Based on Incremental-Step-Pulse Programming
    Fujiki, Jun
    Haimoto, Takashi
    Yasuda, Naoki
    Koyama, Masato
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
  • [50] Impact of SiO2 interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal–oxide–semiconductor capacitors
    Nakibinge Tawfiq Kimbugwe
    Ercan Yilmaz
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 12372 - 12381