Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide-nitride-oxide-silicon memory

被引:2
|
作者
Liu, L. [1 ]
Xu, J. P. [1 ]
Chen, J. X. [1 ]
Ji, F. [1 ]
Huang, X. D. [2 ]
Lai, P. T. [2 ]
机构
[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China
[2] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
MONOS memory; High-k gate stack; Charge storage layer; Tunneling layer; Blocking layer; FLASH MEMORY; DEVICE; GAP;
D O I
10.1016/j.tsf.2012.10.051
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A high-k gate stack structure with ultrathin HfON/SiO2 as dual tunneling layer (DTL), AlN as charge storage layer (CSL) and HfAlO as blocking layer (BL) is proposed to make a charge-trapping-type metal-oxide-nitride-oxide-silicon non-volatile memory device by employing in-situ sputtering method. The validity of the structure is examined and confirmed by transmission electron microscopy. The memory window, program/erase, endurance and retention properties are investigated and compared with similar gate stack structure with Si3N4/SiO2 as DTL, HfO2 as CSL and Al2O3 as BL. Results show that a large memory window of 3.55 V at a program/erase (P/E) voltage of +8 V/-15 V, high P/E speed, and good endurance and retention characteristic can be achieved using the Au/HfAlO/AlN/(HfON/SiO2)/Si gate stack structure. The main mechanisms lie in the enhanced electron injection through the ultrathin high-k HfON/SiO2 DTL with suitable band offset, high trapping efficiency of the high-k AlN material, and effective blocking role of the high-k HfAlO BL. (C) 2012 Published by Elsevier B. V.
引用
收藏
页码:263 / 267
页数:5
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