Space-charge-limited currents in materials with Gaussian energy distributions of localized states

被引：53

作者：

Arkhipov, VI ^{[1
]}

Heremans, P ^{[1
]}

Emelianova, EV ^{[1
]}

Adriaenssens, GJ ^{[1
]}

机构：

[1] Katholieke Univ Leuven, Lab Halfgeleiderfys, B-3001 Heverlee, Belgium

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 25期

关键词：

D O I：

10.1063/1.1424046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A model is formulated describing trap-controlled space-charge-limited currents (SCLCs) in an organic material with a Gaussian density-of-states (DOS) distribution. It is shown that SCLC is not always controlled by carrier release from localized states around the Fermi level and, therefore, a Gaussian DOS can serve as either shallow or deep distribution of localized states depending upon the carrier and/or current density. (C) 2001 American Institute of Physics.

引用

页码：4154 / 4156

页数：3

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