Effect of the pn junction engineering on Si microwire-array solar cells

被引：25

作者：

Mallorqui, A. Dalmau ^{[1
]}

Epple, F. M. ^{[1
]}

Fan, D. ^{[1
]}

Demichel, O. ^{[1
]}

Morral, A. Fontcuberta I. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Lab Mat Semicond, CH-1015 Lausanne, Switzerland

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2012年 / 209卷 / 08期

关键词：

depletion width; diffusion profile; microwire solar cells; p-n-junction; recombination; SILICON; ABSORPTION; NANOWIRE; PLANAR;

D O I：

10.1002/pssa.201228165

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the impact of the doping concentration design on the performance of silicon microwire arrays as photovoltaic devices. We have fabricated arrays with different p- and n-doping profiles and thicknesses, obtaining mean efficiencies as high as 9.7% under AM 1.5G solar illumination. The results reveal the importance of scaling the microwire diameter with the depletion width resulting from doping concentrations. The doping of the core should be kept low in order to reduce bulk recombination. Furthermore, the thickness of the n-shell should be kept as thin as possible to limit the emitter losses.

引用

页码：1588 / 1591

页数：4

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