The magnetic properties of Gd doped ZnO nanowires

被引：54
作者：
Ma, Xiying [1 ,2 ]
机构：
[1] Suzhou Univ Sci & Technol, Sch Math & Phys, Suzhou 215011, Jiangsu, Peoples R China
[2] Shanghai Jiao Tong Univ, Res Inst Micronanometer Sci & Technol, Key Lab Thin Film & Microfabricat Technol, Minist Educ, Shanghai 200030, Peoples R China
来源：
THIN SOLID FILMS | 2012年 / 520卷 / 17期
基金：
中国国家自然科学基金;
关键词：
Zinc oxide; Gadolinium; Rare earth doping; Nanowires; Magnetic properties; Magnetic moment; Chemical vapor deposition; THIN-FILMS; SEMICONDUCTORS; FERROMAGNETISM; PHOTOLUMINESCENCE; TEMPERATURE; CRYSTALS; ORIGIN; BULK; FE;
D O I：
10.1016/j.tsf.2012.04.046
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a study of the ferromagnetic properties of Gd doped ZnO nanowires (Nws) fabricated by means of a chemical vapor deposition process. The sample was grown with a Gd mole ratio 5% in a mixed Zn/Mn source under a constant O-2/Ar gas mixture flowing at 580 degrees C followed by annealing at 800 degrees C. We found that the magnetic properties of ZnO:Gd Nws are a function of the external magnetic field and temperature. An average value of the moment per Gd atom is as high as 3278 mu B as compared to its atomic moment of 8 mu B, showing that the ZnO:Gd Nws are an intrinsic diluted magnetic semiconductor. The unprecedented colossal moment is attributed to the effective Ruderman-Kittel-Kasuya-Yosida exchanging interaction. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：5752 / 5755
页数：4
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