Electron transport properties of undoped SnO2 monocrystals

被引：24

作者：

Lanfredi, Alexandre J. C. ^{[1
]}

Geraldes, Renan R. ^{[2
]}

Berengue, Olivia M. ^{[2
]}

Leite, Edson R. ^{[3
]}

Chiquito, Adenilson J. ^{[2
]}

机构：

[1] Univ Fed ABC, Ctr Engn Modelagem Ciencias Sociais Aplicadas, BR-09210170 Sao Paulo, Brazil

[2] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Paulo, Brazil

[3] Univ Fed Sao Carlos, Lab Interdisciplinar Eletroquim & Ceram, Dept Quim, BR-13565905 Sao Paulo, Brazil

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 02期

基金：

巴西圣保罗研究基金会;

关键词：

energy gap; hopping conduction; semiconductor materials; tin compounds; wide band gap semiconductors; NANOBELTS; NANOWIRES; RAMAN;

D O I：

10.1063/1.3068185

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using low-resistance indium contacts, we measured some transport properties of undoped vapor-liquid-solid grown tin oxide monocrystals with a belt shape. From the transport measurements, the two following conduction mechanisms were investigated: thermal activation and variable range hopping. An energy gap of 3.8 eV was found. The energy gap was confirmed by thermally activated measurements in the range between 10 and 300 K. For high temperatures (T>300 K), the influence of the disorder caused by the superficial ions layer is measurable. The electron transport in this case was found to be governed by the well known variable range hopping mechanism and the spatial extension of carrier's wavelength was calculated to be 4 nm.

引用

页数：4

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