Fabrication of β-sic quantum dots by photo-assisted electrochemical corrosion of bulk powders

被引：9

作者：

Mwania, Munuve ^{[1
]}

Janaky, Csaba ^{[1
,2
]}

Rajeshwar, Krishnan ^{[1
]}

Kroll, Peter ^{[1
]}

机构：

[1] Univ Texas Arlington, Dept Chem & Biochem, Arlington, TX 76019 USA

[2] Univ Szeged, Dept Phys Chem & Mat Sci, H-6720 Szeged, Hungary

来源：

ELECTROCHEMISTRY COMMUNICATIONS | 2013年 / 37卷

基金：

美国国家科学基金会;

关键词：

Photoelectrochemical corrosion; Luminescence; Semiconductor; Quantum-dot; NANOPARTICLES;

D O I：

10.1016/j.elecom.2013.09.020

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Silicon carbide (SiC) quantum dots (QDs) are eminent candidates for various applications ranging from bioimaging and energy conversion, to optics. In this communication we describe a new top-down method for producing SiC QDs (<10 nm) from bulk powder (>50nm) and slurry. Photo-assisted electrochemical etching is employed to obtain the quantum-sized clusters. We show that the process (hence, the amount of QDs synthesized as well as their size) can be controlled via regulating time as confirmed by both high-resolution transmission electron microscopy and photoluminescence data. The presented method may serve as a new avenue to prepare size-controlled nanoparticles of different semiconductors. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：1 / 4

页数：4

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