Organic thin-film transistor performance improvement using ammonia (NH3) plasma treatment on the gate insulator surface

被引：13

作者：

Fan, Ching-Lin ^{[1
,2
]}

Yang, Tsung-Hsien ^{[1
]}

Chiu, Ping-Cheng ^{[1
]}

Huang, Cheng-Han ^{[1
]}

Lin, Cheng-I ^{[1
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan

[2] Natl Taiwan Univ Sci & Technol, Grad Inst Electroopt Engn, Taipei 106, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2009年 / 53卷 / 02期

关键词：

Organic thin-film transistor; Pentacene; NH3-plasma; Gate insulator treatment; Interface trap-state density; FIELD-EFFECT TRANSISTORS; DIELECTRICS; MORPHOLOGY; LAYER;

D O I：

10.1016/j.sse.2008.11.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study examined the effects of NH3-Plasma treatment on the gate insulator (SiO2) surface before pentacene deposition. The NH3-plasma treatment can improve the interface property between SiO2/pentacene, providing a suitable surface for pentacene growth. Moreover, the NH3-plasma treatment can also help terminate dangling bonds at the SiO2 surface and thus reduce the interface trap-state density. The proposed method provides a simple and effective method for treating the interface between SiO2/pentacene, reducing interface traps and simultaneously improving pentacene crystallization. Crown Copyright @ 2008 Published by Elsevier Ltd. All rights reserved.

引用

页码：246 / 250

页数：5

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