Sub-100 ns solid-state laser Q-switched with double wall carbon nanotubes

被引：26

作者：

Yu, Haijuan ^{[1
]}

Zhang, Ling ^{[1
]}

Wang, Yonggang ^{[2
,3
]}

Yan, Shilian ^{[1
]}

Sun, Wei ^{[1
]}

Li, Jinmin ^{[1
]}

Tsang, Yuen ^{[2
,3
]}

Lin, Xuechun ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, Beijing 10083, Peoples R China

[2] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

[3] Hong Kong Polytech Univ, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China

来源：

OPTICS COMMUNICATIONS | 2013年 / 306卷

基金：

中国国家自然科学基金;

关键词：

Passive Q-switched laser; Diode pumped; Double wall carbon nanotubes; SEMICONDUCTOR SATURABLE ABSORBERS; MECHANICAL-PROPERTIES; MICROCHIP LASERS; ND; DESIGN;

D O I：

10.1016/j.optcom.2013.05.010

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report a Q-switched diode-pumped Nd:YAG laser at the 1064 nm with double wall carbon nanotube (DWNT) based saturable absorber. The laser pulses with energy of 2 mu J and 90 ns duration are obtained, and the average output power is 640 mW. To the best of our knowledge, this is the first demonstration of Q-switched solid state laser with DWNT based saturable absorber. The result shows the potential of DWNTs as Q-switcher for high power pulse generation. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：128 / 130

页数：3

共 23 条

[1] DESIGN AND OPERATION OF ANTIRESONANT FABRY-PEROT SATURABLE SEMICONDUCTOR ABSORBERS FOR MODE-LOCKED SOLID-STATE LASERS [J].