Evolution of silicon microstrip detector currents during proton irradiation at the CERN PS

被引：9

作者：

Harper, RS ^{[1
]}

Buttar, CM

Allport, PP

Andricek, L

Carter, JR

Casse, G

Dawson, I

Ferrère, D

Grigson, CMD

Morgan, D

Robinson, D

机构：

[1] Univ Sheffield, Dept Phys & Astronomy, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Liverpool, Oliver Lodge Lab, Liverpool L69 3BX, Merseyside, England

[3] Max Planck Inst Phys & Astrophys, Munich, Germany

[4] Univ Cambridge, Cavendish Lab, Cambridge CB2 1TN, England

[5] Univ Geneva, DPNC, CH-1211 Geneva 4, Switzerland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2002年 / 479卷 / 2-3期

关键词：

ATLAS; radiation damage; silicon microstrip detector;

D O I：

10.1016/S0168-9002(01)00945-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Prototype ATLAS silicon microstrip detectors have been irradiated to the dose predicted for 10 years of LHC operation with 24 GeV protons at the CERN PS whilst cooled to the ATLAS design operating temperature. The detector currents were monitored during irradiation, which allows the predictions of bulk radiation damage parameterizations to be tested. Values for the damage constant x and the rate of acceptor creation beta have been calculated and are in agreement with those previously published for the irradiation of silicon diodes. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：548 / 554

页数：7