Be redistribution in InGaAs and InP grown by gas source molecular beam epitaxy

被引：6
作者：
Mozume, T
Hosomi, K
机构：
[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷
关键词：
D O I：
10.1016/S0022-0248(96)01211-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The redistribution of Be during the growth of InGaAs and InGaAs/InP heterostructures by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry. Be deposition to the InP layer grown next to the highly Be-doped InGaAs layer has been shown to cause significant Be segregation. Although the growth temperature and AsH3 flux dependence of Be redistribution in InGaAs layers can be explained by the substitutional-interstitial (S-I) diffusion mechanism, no enhancement of Be redistribution in InGaAs is observed by ni doping in nearby layers, inconsistent with previous results of Zn diffusion. The temperature dependence of Be profiles in InP layers follows the S-I diffusion mechanism, however the PH3 flow rate dependence is inconsistent with the model.
引用
收藏
页码：1223 / 1230
页数：8
相关论文
共 50 条
[41]   Annealing experiments on InP/InGaAs single and double HBTS grown by molecular beam epitaxy [J].
Sexton, J ;
Missous, M .
EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2002, :300-305
[42]   AlAs/InAlAs-InGaAs QCLs grown by gas-source molecular-beam epitaxy [J].
Masselink, W. T. ;
Semtsiv, M. P. ;
Flores, Y. V. ;
Kurlov, Sergii ;
Elagin, M. ;
Monastyrskyi, G. ;
Kischkat, J-F ;
Aleksandrova, A. .
NOVEL IN-PLANE SEMICONDUCTOR LASERS XIII, 2014, 9002
[43]   INGAAS/INP HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY [J].
WILLEN, B ;
ASONEN, H ;
TOIVONEN, M .
ELECTRONICS LETTERS, 1995, 31 (17) :1514-1515
[44]   INGAAS/INP QUANTUM WIRES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY ONTO V-GROOVED INP SUBSTRATES WITH (111)A FACET SIDEWALLS [J].
WANG, J ;
ROBINSON, BJ ;
THOMPSON, DA ;
SIMMONS, JG .
APPLIED PHYSICS LETTERS, 1995, 67 (16) :2358-2360
[45]   Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy [J].
Li, S. G. ;
Gong, Q. ;
Cao, C. F. ;
Wang, X. Z. ;
Yue, L. ;
Liu, Q. B. ;
Wang, H. L. ;
Wang, Y. .
INFRARED PHYSICS & TECHNOLOGY, 2012, 55 (2-3) :205-209
[46]   INGAASP INP QUANTUM-WELL MODULATORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].
TEMKIN, H ;
GERSHONI, D ;
PANISH, MB .
APPLIED PHYSICS LETTERS, 1987, 50 (25) :1776-1778
[47]   (AlGa) InP and GaInP/AlInP multiple quantum wells grown by gas source molecular beam epitaxy [J].
Yuan, Ruixia ;
Yan, Chunhui ;
Guo, Hongxi ;
Li, Xiaobing ;
Zhu, Shirong ;
Li, Lingxiao ;
Zeng, Yiping ;
Kong, Meiying .
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1994, 15 (05) :312-316
[48]   GAINAS(P) INP QUANTUM WELL STRUCTURES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].
TEMKIN, H ;
PANISH, MB ;
PETROFF, PM ;
HAMM, RA ;
VANDENBERG, JM ;
SUMSKI, S .
APPLIED PHYSICS LETTERS, 1985, 47 (04) :394-396
[49]   Carbon nanotubes grown by gas source molecular beam epitaxy [J].
Wan, J ;
Luo, YH ;
Liu, JL ;
Li, RG ;
Jin, G ;
Choi, SD ;
Wang, KL .
JOURNAL OF CRYSTAL GROWTH, 2001, 227 :820-824
[50]   InGaAsBi materials grown by gas source molecular beam epitaxy [J].
Ai, Likun ;
Zhou, Shuxing ;
Qi, Ming ;
Xu, Anhuai ;
Wang, Shumin .
JOURNAL OF CRYSTAL GROWTH, 2017, 477 :135-138
12345