Be redistribution in InGaAs and InP grown by gas source molecular beam epitaxy

被引：6

作者：

Mozume, T

Hosomi, K

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

关键词：

D O I：

10.1016/S0022-0248(96)01211-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The redistribution of Be during the growth of InGaAs and InGaAs/InP heterostructures by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry. Be deposition to the InP layer grown next to the highly Be-doped InGaAs layer has been shown to cause significant Be segregation. Although the growth temperature and AsH3 flux dependence of Be redistribution in InGaAs layers can be explained by the substitutional-interstitial (S-I) diffusion mechanism, no enhancement of Be redistribution in InGaAs is observed by ni doping in nearby layers, inconsistent with previous results of Zn diffusion. The temperature dependence of Be profiles in InP layers follows the S-I diffusion mechanism, however the PH3 flow rate dependence is inconsistent with the model.

引用

收藏

页码：1223 / 1230

页数：8

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