Hexagonal CdTe films with Te excess grown at room temperature by laser ablation

被引：7

作者：

de Moure-Flores, F. ^{[1
]}

Quinones-Galvan, J. G. ^{[2
]}

Guillen-Cervantes, A. ^{[2
]}

Santoyo-Salazar, J. ^{[2
]}

Hernandez-Hernandez, A. ^{[2
]}

Contreras-Puente, G. ^{[1
]}

Olvera, M. de la L. ^{[3
]}

Melendez-Lira, M. ^{[2
]}

机构：

[1] IPN, Escuela Super Fis & Matemat, Mexico City 07738, DF, Mexico

[2] IPN, CINVESTAV, Dept Phys, Mexico City 07360, DF, Mexico

[3] IPN, CINVESTAV, Dept Elect Engn, Solid State Sect, Mexico City 07360, DF, Mexico

来源：

MATERIALS LETTERS | 2013年 / 92卷

关键词：

Laser ablation; CdTe hexagonal; CdTe films; Te excess;

D O I：

10.1016/j.matlet.2012.10.056

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CdTe thin films were grown by laser ablation using a Nd:YAG laser at wavelengths of 1064 nm and 532 nm, on Corning glass substrates at room temperature. CdTe powders were used as target for deposition of the films. The growth time was 10 min and the films were deposited in vacuum. X-ray diffraction shows that films have hexagonal phase. EDS analysis indicates that the films grew with excess of Te, which indicates that CdTe films have p-type conductivity. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：94 / 95

页数：2

共 5 条

[1] Structural and optical properties of Cu-doped CdTe films with hexagonal phase grown by pulsed laser deposition [J].

de Moure-Flores, F. ;

Quinones-Galvan, J. G. ;

Guillen-Cervantes, A. ;

Santoyo-Salazar, J. ;

Hernandez-Hernandez, A. ;

Olvera, M. de la L. ;

Zapata-Torres, M. ;

Melendez-Lira, M. .

AIP ADVANCES, 2012, 2 (02)

[2]

McCandless Brian E, 2003, HDB PHOTOVOLTAIC SCI, P617

[3] Growth of cubic and hexagonal CdTe thin films by pulsed laser deposition [J].

Pandey, SK ;

Tiwari, U ;

Raman, R ;

Prakash, C ;

Krishna, V ;

Dutta, V ;

Zimik, K .

THIN SOLID FILMS, 2005, 473 (01) :54-57

[4] CRYSTALLINE PHASES OF II-VI COMPOUND SEMICONDUCTORS GROWN BY PULSED-LASER DEPOSITION [J].

SHEN, WP ;

KWOK, HS .

APPLIED PHYSICS LETTERS, 1994, 65 (17) :2162-2164

[5]

Sze S.M., 2021, Physics of semiconductor devices

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