Magneto-Electric Magnetic Tunnel Junction Based Analog Circuit Options

被引：0
|
作者：
Sharma, Nishtha [1 ]
Bird, Jonathan [2 ]
Dowben, Peter [3 ]
Marshall, Andrew [1 ]
机构：
[1] Univ Texas Dallas, Richardson, TX 75083 USA
[2] Univ Buffalo, Buffalo, NY USA
[3] Univ Nebraska, Lincoln, NE USA
来源：
2017 30TH IEEE INTERNATIONAL SYSTEM-ON-CHIP CONFERENCE (SOCC) | 2017年
关键词：
Spintronics; Magneto-Electric Magnetic Tunnel Junction (ME-MTJ); logic; Memory; Analog-to-Digital converter (ADC); Verilog-A; Magnetic Tunnel Junction (MTJ); EXCHANGE BIAS; ELECTRIC CONTROL;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The magneto-electric magnetic tunnel junction (ME-MTJ) is a voltage controlled beyond CMOS device based on the principle of ME anti-ferromagnetic (AFM) exchange biasing of chromia (Cr2O3) and the tunneling magneto resistance (TMR) of a magnetic tunnel junction (fixed/free ferromagnet (FM) stack). These devices have previously been demonstrated for the implementation of digital logic and memory applications. We here demonstrate their analog capabilities with a variety of analog functions adapted specifically to the characteristics of ME-MTJ based devices. The novel circuit options proposed in this paper includes a ME-MTJ based analog comparator and the two variations of an 8 level analog-to-digital converter (ADC) using serial and parallel ME-MTJ circuit configurations.
引用
收藏
页码：179 / 183
页数：5
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