Thermal Oxidation of sintered Silicon Carbide Used for Diesel Particulate Filter Walls

被引:3
作者
Thome, T. [1 ]
Capelle, M. [1 ]
Thome, L. [2 ]
Prenant, T. [1 ]
Neret, M. [1 ]
机构
[1] Ctr Tech Velizy, PSA Peugeot Citroen, DRD DCHM PMXP TAC, F-78943 Velizy Villacoublay, France
[2] Univ Paris 11, CNRS, IN2P3, Ctr Spectrometrie Nucl & Spectrometrie Masse, F-91405 Orsay, France
来源
JOURNAL OF CERAMIC SCIENCE AND TECHNOLOGY | 2012年 / 3卷 / 02期
关键词
SiC; SiO2; thermal properties; oxycarbide; oxidation;
D O I
10.4416/JCST2012-00006
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The temperature dependence of the thermal oxidation of sintered silicon carbide (SiC) used for diesel particulate filter walls (DPF) is investigated. Silicon carbide samples are heated at temperatures between 770 K and 1470 K for different annealing times to study the effect of both the temperature and the duration on the oxidation kinetics. The thickness and composition of the oxide layers are characterized by means of XPS and RBS. Silicon oxycarbides (SiCxOy) are first formed and then silicon dioxide (SiO2) appears above 770 K. Different types of SiO2 layers can be identified. The compounds obtained depend on thermal oxidation conditions.
引用
收藏
页码:89 / 93
页数:5
相关论文
共 19 条
[1]   High temperature oxidation of SiC under helium with low-pressure oxygen-Part 1: Sintered α-SiC [J].
Charpentier, L. ;
Balat-Pichelin, M. ;
Audubert, F. .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2010, 30 (12) :2653-2660
[2]  
Chen XF, 2009, J MATER SCI TECHNOL, V25, P115
[3]   Passive-oxidation kinetics of SiC microparticles [J].
Das, D ;
Farjas, J ;
Roura, P .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2004, 87 (07) :1301-1305
[4]   Behavior of SiC at high temperature under helium with low oxygen partial pressure [J].
Eck, J. ;
Balat-Pichelin, M. ;
Charpentier, L. ;
Beche, E. ;
Audubert, F. .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2008, 28 (15) :2995-3004
[5]   Low-temperature oxidation of SiC surfaces by supercritical water oxidation [J].
Futatsuki, Takashi ;
Oe, Taro ;
Aoki, Hidemitsu ;
Komatsu, Naoyoshi ;
Kimura, Chiharu ;
Sugino, Takashi .
APPLIED SURFACE SCIENCE, 2010, 256 (22) :6512-6517
[6]   Influence of the oxidation on the surface properties of silicon carbide [J].
Guerfi, K ;
Lagerge, S ;
Meziani, MJ ;
Nedellec, Y ;
Chauveteau, G .
THERMOCHIMICA ACTA, 2005, 434 (1-2) :140-149
[7]   ARXPS STUDIES OF SIO2-SIC INTERFACES AND OXIDATION OF 6H SIC SINGLE-CRYSTAL SI-(001) AND C-(001)OVER-BAR SURFACES [J].
HORNETZ, B ;
MICHEL, HJ ;
HALBRITTER, J .
JOURNAL OF MATERIALS RESEARCH, 1994, 9 (12) :3088-3094
[8]   Thermal oxidation temperature dependence of 4H-SiC MOS interface [J].
Kurimoto, Hirofumi ;
Shibata, Kaoru ;
Kimura, Chiharu ;
Aoki, Hidemitsu ;
Sugino, Takashi .
APPLIED SURFACE SCIENCE, 2006, 253 (05) :2416-2420
[9]   SiO2 film thickness metrology by x-ray photoelectron spectroscopy [J].
Lu, ZH ;
McCaffrey, JP ;
Brar, B ;
Wilk, GD ;
Wallace, RM ;
Feldman, LC ;
Tay, SP .
APPLIED PHYSICS LETTERS, 1997, 71 (19) :2764-2766
[10]  
Mayer M, 1999, AIP CONF PROC, V475, P541