Emerging Memory Devices for Neuromorphic Computing

被引:386
作者
Upadhyay, Novnidhi K. [1 ]
Jiang, Hao [1 ]
Wang, Zhongrui [1 ]
Asapu, Shiva [1 ]
Xia, Qiangfei [1 ]
Yang, J. Joshua [1 ]
机构
[1] Univ Massachusetts, Dept Elect & Comp Engn, Amherst, MA 01003 USA
基金
美国国家科学基金会;
关键词
artificial synapses; emerging memory technologies; memristors; neuromorphic systems; synaptic transistors; PHASE-CHANGE MEMORY; SPIN; SYNAPSE; PLASTICITY; RESISTANCE; PROPOSAL; MOTION; LOGIC;
D O I
10.1002/admt.201800589
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A neuromorphic computing system may be able to learn and perform a task on its own by interacting with its surroundings. Combining such a chip with complementary metal-oxide-semiconductor (CMOS)-based processors can potentially solve a variety of problems being faced by today's artificial intelligence (Al) systems. Although various architectures purely based on CMOS are designed to maximize the computing efficiency of Al-based applications, the most fundamental operations including matrix multiplication and convolution heavily rely on the CMOS-based multiply-accumulate units which are ultimately limited by the von Neumann bottleneck. Fortunately, many emerging memory devices can naturally perform vector matrix multiplication directly utilizing Ohm's law and Kirchhoff's law when an array of such devices is employed in a cross-bar architecture. With certain dynamics, these devices can also be used either as synapses or neurons in a neuromorphic computing system. This paper discusses various emerging nanoscale electronic devices that can potentially reshape the computing paradigm in the near future.
引用
收藏
页数:13
相关论文
共 82 条
[1]   Memristors Empower Spiking Neurons With Stochasticity [J].
Al-Shedivat, Maruan ;
Naous, Rawan ;
Cauwenberghs, Gert ;
Salama, Khaled Nabil .
IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, 2015, 5 (02) :242-253
[2]  
[Anonymous], 2016, SCI REP
[3]   CAN PROGRAMMING BE LIBERATED FROM VON NEUMANN STYLE - FUNCTIONAL STYLE AND ITS ALGEBRA OF PROGRAMS [J].
BACKUS, J .
COMMUNICATIONS OF THE ACM, 1978, 21 (08) :613-641
[4]   Ferroelectricity in hafnium oxide thin films [J].
Boescke, T. S. ;
Mueller, J. ;
Braeuhaus, D. ;
Schroeder, U. ;
Boettger, U. .
APPLIED PHYSICS LETTERS, 2011, 99 (10)
[5]   Analogue spin-orbit torque device for artificial-neural-network-based associative memory operation [J].
Borders, William A. ;
Akima, Hisanao ;
Fukami, Shunsuke ;
Moriya, Satoshi ;
Kurihara, Shouta ;
Horio, Yoshihiko ;
Sato, Shigeo ;
Ohno, Hideo .
APPLIED PHYSICS EXPRESS, 2017, 10 (01)
[6]   'Memristive' switches enable 'stateful' logic operations via material implication [J].
Borghetti, Julien ;
Snider, Gregory S. ;
Kuekes, Philip J. ;
Yang, J. Joshua ;
Stewart, Duncan R. ;
Williams, R. Stanley .
NATURE, 2010, 464 (7290) :873-876
[7]   Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element [J].
Burr, Geoffrey W. ;
Shelby, Robert M. ;
Sidler, Severin ;
di Nolfo, Carmelo ;
Jang, Junwoo ;
Boybat, Irem ;
Shenoy, Rohit S. ;
Narayanan, Pritish ;
Virwani, Kumar ;
Giacometti, Emanuele U. ;
Kuerdi, Bulent N. ;
Hwang, Hyunsang .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (11) :3498-3507
[8]   Phase change memory technology [J].
Burr, Geoffrey W. ;
Breitwisch, Matthew J. ;
Franceschini, Michele ;
Garetto, Davide ;
Gopalakrishnan, Kailash ;
Jackson, Bryan ;
Kurdi, Buelent ;
Lam, Chung ;
Lastras, Luis A. ;
Padilla, Alvaro ;
Rajendran, Bipin ;
Raoux, Simone ;
Shenoy, Rohit S. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (02) :223-262
[9]   High-Speed and Low-Energy Nitride Memristors [J].
Choi, Byung Joon ;
Torrezan, Antonio C. ;
Strachan, John Paul ;
Kotula, P. G. ;
Lohn, A. J. ;
Marinella, Matthew J. ;
Li, Zhiyong ;
Williams, R. Stanley ;
Yang, J. Joshua .
ADVANCED FUNCTIONAL MATERIALS, 2016, 26 (29) :5290-5296
[10]   SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations [J].
Choi, Shinhyun ;
Tan, Scott H. ;
Li, Zefan ;
Kim, Yunjo ;
Choi, Chanyeol ;
Chen, Pai-Yu ;
Yeon, Hanwool ;
Yu, Shimeng ;
Kim, Jeehwan .
NATURE MATERIALS, 2018, 17 (04) :335-+