Current-voltage-temperature and capacitance-voltage-temperature characteristics of TiW alloy/p-InP Schottky barrier diode

We systematically characterize TiW alloy/p-InP Schottky barrier diode using current-voltage (I-V) and capacitance-voltage (C-V) measurements for different temperatures from 300 K to 400 K. The electrical parameters such as barrier height (Phi(b0)) and ideality factor (n) have been obtained from the thermal emission (TE) theory. Phi(b0) increases and n decreases with the increasing of temperature. The temperature dependency of barrier characteristics is interpreted by TE theory assuming a Gaussian distribution of the barrier heights according to the inhomogeneous model. The mean barrier height (Phi) over bar (b0) (T= 0 K) = 1.09 V and standard deviation sigma(0) = 135 mV are obtained by plotting Phi(b0) versus 1/2kT, indicating the Gaussian distribution of the barrier heights. The value of extracted Richardson constant A* is 56.2504 Acm(-2) K-2, which is in good agreement with the theoretical value. All these obtained results show that the carrier transport process can be modeled by the TE theory. In addition, the C-V characteristics are analyzed by taking into account series resistance (R-s). The extracted interface states distribution shows the increase of the interface state density from midgap towards the top of the valence band. (C) 2015 Elsevier B.V. All rights reserved.