Current-voltage-temperature and capacitance-voltage-temperature characteristics of TiW alloy/p-InP Schottky barrier diode

被引：17
作者：
Chen, Jun [1 ]
Wang, Qingsong [1 ]
Lv, Jiabing [1 ]
Tang, Hengjing [2 ]
Li, Xue [2 ]
机构：
[1] Soochow Univ, Sch Elect & Informat Engn, Suzhou 215006, Jiangsu, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 649卷
基金：
高等学校博士学科点专项科研基金; 中国国家自然科学基金;
关键词：
Metals and alloys; Semiconductors; Electrical transport; Surfaces and interfaces; I-V; C-V; CURRENT-TRANSPORT; INTERFACE STATES; ANODIZATION PROCESS; ELECTRON-TRANSPORT; SERIES RESISTANCE; CONTACTS; DEPENDENCE; GAAS;
D O I：
10.1016/j.jallcom.2015.07.239
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We systematically characterize TiW alloy/p-InP Schottky barrier diode using current-voltage (I-V) and capacitance-voltage (C-V) measurements for different temperatures from 300 K to 400 K. The electrical parameters such as barrier height (Phi(b0)) and ideality factor (n) have been obtained from the thermal emission (TE) theory. Phi(b0) increases and n decreases with the increasing of temperature. The temperature dependency of barrier characteristics is interpreted by TE theory assuming a Gaussian distribution of the barrier heights according to the inhomogeneous model. The mean barrier height (Phi) over bar (b0) (T= 0 K) = 1.09 V and standard deviation sigma(0) = 135 mV are obtained by plotting Phi(b0) versus 1/2kT, indicating the Gaussian distribution of the barrier heights. The value of extracted Richardson constant A* is 56.2504 Acm(-2) K-2, which is in good agreement with the theoretical value. All these obtained results show that the carrier transport process can be modeled by the TE theory. In addition, the C-V characteristics are analyzed by taking into account series resistance (R-s). The extracted interface states distribution shows the increase of the interface state density from midgap towards the top of the valence band. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：1220 / 1225
页数：6
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