Epitaxial integration of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (111) thin films on GaN (0002) with La0.5Sr0.5CoO3/TiO2 buffer layers

被引：4
作者：
Li, Guanjie [1 ,2 ]
Li, Xiaomin [1 ]
Bi, Zhijie [1 ,2 ]
Chen, Yongbo [1 ,2 ]
Xu, Xiaoke [1 ,3 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China
[3] Shanghai Inst Technol, Sch Mat Sci & Engn, 100 Haiquan Rd, Shanghai 201418, Peoples R China
来源：
MATERIALS LETTERS | 2018年 / 216卷
基金：
中国国家自然科学基金; 国家重点研发计划;
关键词：
Ferroelectrics; Thin films; Epitaxial growth; PMN-PT; GaN; Physical vapour deposition;
D O I：
10.1016/j.matlet.2018.01.086
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) ferroelectric thin films were epitaxially integrated on GaN (0002) substrates by pulsed laser deposition. La0.5Sr0.5CoO3 (LSCO)/TiO2 buffer layers are designed to decrease the lattice mismatch between PMN-PT and GaN, which promotes the epitaxial growth of pure perovskite PMN-PT (111) thin films. Meanwhile, LSCO/TiO2 heterostructures could be served as the bottom electrodes for integrated ferroelectric devices. Epitaxial relationship of the multilayer is determined to be (111) [1 (1) over bar0] PMN-PT//(111) [1 (1) over bar0]LSCO//(100)[001] TiO2//(0002) [11 (2) over bar0] GaN. The integrated PMN-PT (111) films exhibit good ferroelectric and dielectric properties with remanent polarization of 11.3 mu C/cm(2), coercive field of 34.1 kV/cm at 100 Hz, dielectric constant of 2035 and dielectric tunability of 68.1% at 1 kHz, which make it a potential candidate for the applications in GaN-based integrated ferroelectric devices. (C) 2018 Elsevier B.V. All rights reserved.
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收藏
页码：224 / 227
页数：4
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