Composition-dependent structural and electrical properties of PbSe1-xTex thin films

被引:24
作者
Hmood, A. [1 ]
Kadhim, A. [1 ]
Abu Hassan, H. [1 ]
机构
[1] Univ Sains Malaysia, Sch Phys, Minden 11800, Penang, Malaysia
关键词
PbSe1-xTex; Thin films; X-ray diffraction; Electrical properties; PBSE;
D O I
10.1016/j.spmi.2012.04.001
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Polycrystalline PbSe1-xTex ingots were prepared by solid-state microwave synthesis. Thin films of PbSe1-xTex were then deposited onto clean glass substrates using vacuum evaporation technique. Their nanostructure morphologies and stoichiometric ratio were examined using scanning electron microscopy (SEM) and energy dispersive X-ray spectra (EDX). X-ray diffraction (XRD) patterns indicated that the lattice constants of PbSe1-xTex powders and thin films increased with the increasing amount of Te. From the electrical property measurements, the thin films were characterized by n-type behavior. (c) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:825 / 833
页数:9
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